27 September 2010
Applied Materials today launched its new Applied Centura Tetra X Advanced Reticle Etch system – a system that etches photomasks needed for device layers at 22nm and beyond.
Expanding the capabilities of Applied’s industry-standard Tetra III platform, the Tetra X breaks the 2nm critical dimension uniformity (CDU) barrier across all feature sizes – delivering the critical mask accuracy that can enable mask makers to exceed their customers’ strictest pattern-to-specification requirements for all device types.
The Tetra X system’s uniformity performance uniquely enables enhanced lithography resolution for demanding double-patterning and source-mask optimization (SMO) techniques by delivering highly uniform, linear etch across all features sizes and pattern densities while maintaining virtually-zero defectivity. The Tetra X system employs a wide range of system enhancements, including proprietary, real-time process monitoring technology to enable the next-generation hard mask, opaque MoSi2, and quartz etch processes used to fabricate advanced binary and phase shift photomasks.
Applied’s Tetra systems have been used by mask makers worldwide to etch the vast majority of high-end masks over the last five years including virtually every 32nm node and EUVL3 development mask.