09 March 2011
The College of Nanoscale Science and Engineering (CNSE) of the University at Albany, New York (UAlbany) today announced the introduction of a 28 nanometre (nm) high-K metal gate (HKMG) technology platform.
This platform will enable the college to build fully-enabled, industry-compatible integrated devices, further expanding its nanoelectronics research and development (R&D) capabilities. (The term "high-K" refers to a material with a high dielectric constant K, compared to silicon dioxide, used in semiconductor manufacturing processes. It is used in conjunction with a metal gate.)
The UAlbany NanoCollege (part of the State University of New York, SUNY) has licensed from IBM the rights to low power, 28nm HKMG bulk complementary metal oxide semiconductor (CMOS) technology expected to be deployed at CNSE's Albany NanoTech Complex this year. These capabilities will provide new technology resources for existing global collaboration partners and offer opportunities to attract new companies to the nanotech research being done at CNSE, where a 65nm R&D process line is already installed.
HKMG technology is seen as a key enabler for the scaling of advanced CMOS technologies and devices, offering improved performance and reduced power consumption. These advantages will help accelerate the commercialization of nanoelectronics innovations for a host of products and sectors currently utilizing advanced silicon technology. HKMG technology will drive exciting next-generation applications in computation, communications, health care, energy and other critical areas.
The enhanced performance and reduced power consumption using HKMG technology for 28nm circuits have been significant, compared to previous technology generations, with performance improvements of 40% and power reduction of 30% over 45nm technology circuits.