Wolfspeed, a Cree Company and a specialist in silicon carbide (SiC) power products, extends its leadership in SiC power device technology with the release of the industry’s first power module that passes the harsh environment qualification test for simultaneous high-humidity, high-temperature and high-voltage conditions.
This reliability benchmark enables system designers to use this device in outdoor applications such as transportation, wind, solar and other renewables where extreme environmental conditions have historically challenged safe device operation. The new all-SiC module, rated for 300 A and 1.2 kV blocking, was stressed in an 85 percent relative humidity, 85°C ambient while biased at 80 percent of rated voltage (960V). Success in harsh environment testing under bias provides further confidence in the overall ruggedness of SiC device technology for all applications.
Powered by new Wolfspeed MOSFETs (CPM2-1200-0025A) and Gen5 Schottky diodes that also pass the harsh environment test at the die level, the new module retains the low 4.2 m? on-resistance and more than five times lower switching losses than similarly rated, latest generation IGBT modules. Module construction uses high thermal conductivity aluminum nitride substrates and optimized assembly methods to meet industry thermal and power cycling requirements.
Available under part number WAS300M12BM2, the new module can be driven using existing Wolfspeed gate drivers for 62mm modules.