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Inverse charge funnelling in strained HfS2 a Schematic diagram of the proposed device see Fig 4 for the actual implementation Compressive strain is induced in the centre of a semiconducting HfS2 channel by controlled photo-oxidation The compression induce
US Naval Research Laboratory displays Solar-Soaring UAV at World Conference on Photovoltaic Energy Conversion Raeanna MorganNRL
Nooshin Mortazavi, materials researcher at Chalmers Department of Physics Photo credit Heln Rosenfeldt

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